Influence of X-ray Irradiated on Junction Depth of P-n Diode
نویسندگان
چکیده
In this paper investigate the effect of X-ray irradiated on p-n diode. The change of electrical characteristics of diode can confirm by junction depth. Energy of irradiated are various in the range 40-70 keV at time of exposure 205 second. After irradiated by X-ray the electrical were changed, leakage current were decreased. The change of leakage current can analysis by junction depth, junction depth can be calculated by capacitance-voltage (C-V) characteristics. In junction depth of diode after irradiated the carrier concentration were little change.
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